Automated Mapping Systems

The FS-RT300 combines an FS-8 Multi-Wavelength Ellipsometer with a compact automated mapping stage to provide fast, accurate, and reliable film thickness uniformity measurements across a wafer.

Multi-Wavelength Ellipsometer

The 4th generation Film Sense Multi-Wavelength Ellipsometer systems are now available, with more wavelengths and wider spectral range!

In Situ Monitoring

Film Sense Multi-Wavelength Ellipsometers are ideal for in situ realtime monitoring and control of thin film deposition and etching processes.

Film Sense

Innovative Technology

Key Features and Benefits of all Film Sense Multi-Wavelength Ellipsometers

Features Benefits
Multiple LED sources (either 4 or 8, with wavelengths ranging from 370 – 950 nm, depending on the system) Long lifetimes (>50,000 hours), with no costly lamp changes, time consuming alignments or PM procedures
No moving parts in the ellipsometric detector* Fast measurement times (ellipsometric data in 1.7 ms, with the new Fast Mode feature) and long term reliability
Excellent thickness precision, better than 0.0004 nm for many samples (for a 1 second acquisition), even for sub-monolayer film thicknesses Measurement precision that is only possible with an ellipsometer
Integrated computer for instrument control and data analysis, with a web browser interface accessible from any modern computer, laptop, or tablet No complicated software setup and maintenance
Completely self-contained system No external electronics box or fiber connections

* US Patent #9,354,118

Multi-Wavelength Ellipsometer

4th generation systems are now available!

The 4th generation Film Sense Multi-Wavelength Ellipsometer systems are now available! The primary improvements in this generation are the additional wavelengths and spectral range for the FS-8 model, which further enhance the measurement capabilities over a wide range of thin film applications. The new systems offer the same benefits of the patented* Film Sense ellipsometer technology (long life LED light sources, fast and reliable no moving parts detector, compact design, and web browser software interface), while maintaining ease of use and affordability.

Gen. 4 Common Specifications

  • Compact optics: Source 125 x 80 x 60 mm, Detector 110 x 80 x 60 mm
  • Simple connections: +12V wall plug power supply, Ethernet, and Source-Detector link cables
  • Motorized Source Polarizer:
    – provides automated instrument calibration
    – enables zone-averaged measurements, for improved measurement accuracy
  • 4x more intensity (compared to original FS-1), and updated detector electronics provide improved measurement precision: 2x for ex situ, 4x for in situ

Film Sense Ellipsometer Wavelength

FS-4 Ellipsometer

  • 4 wavelengths, 450 – 660 nm spectral range
    (replaces the original FS-1)
  • Excellent choice for measuring single layer transparent films in the 0 – 2 μm thickness range, with precision down to 0.0004 nm

*US Patent #9,354,118

FS-8 Ellipsometer

  • 8 wavelengths, 370 – 950 nm spectral range
  • The UV wavelength (370 nm) provides enhanced sensitivity when measuring very thin films < 10 nm
  • The 3 longer wavelengths (735, 850, and 950 nm) enable the measurement of thicker transparent films (up to 5 μm), and absorbing semiconductor films (such as poly-Si, SiGe, amorphous-Si, etc.)
  • Film resistivity measurements (using the Drude model) are also improved with the 3 longer wavelengths.
  • 8 wavelengths and wider spectral range provide enhanced measurement capability for multilayer film stacks

Standard Ex Situ Configuration

  • 65° Angle of Incidence.
  • Manual sample loading and height adjustment.
  • Sample sizes up to 200 mm dia. and 20 mm in thickness.
  • Sample tilt with +/-2° range.
  • Beam size on sample: 4 x 9 mm.
  • Compact footprint (180 x 400 mm) and light (5 kg).

FS Ellipsometer Mapping Systems

These products combine an FS Multi-Wavelength Ellipsometer with compact mapping stages to provide fast, accurate, and reliable film thickness uniformity measurements across a wafer.

fs-rt300

FS-RT300

  • Typical time for wafer map: 90 seconds (49 points on a 300 mm diameter wafer)
  • Compact footprint: 400×500 mm, 22 kg
  • Stage travel: R (linear) 150 mm, resolution: 12 µm Theta (rotation) 360°, resolution: 0.1°

 

Features and Specifications

  • 4 wavelengths of ellipsometric data (465, 525, 580, 635 nm), with long life LED sources, and no moving parts detector
  • Accurate thickness measurements for most transparent thin films from 0 – 1000 nm
  • Typical thickness repeatability: 0.015 nm
  • Integrated focusing probes, standard spot size: 0.8 x 1.9 mm (other spot sizes available)
  • Motorized Z-stage for sample auto-alignment
  • Flexible Scan Pattern Editor
  • Contour plots of measured parameters
in-situ

In Situ Capabilities

  • Sub-monolayer thickness precision, in real time
  • Determine deposition rates and film optical constants n&k, at multiple process conditions, without breaking vacuum
  • Monitor and control the deposition of multilayer film structures
  • FS-API interface for external software control (LabVIEW™ compatible)
  • Applicable to most thin film deposition techniques: Sputtering, ALD, MBE, MOCVD, e beam evaporation, etc.

Mounting Specifications

  • Adapters for mounting the FS Ellipsometer light source and detector units to standard 2.75″ or 1.33″ conflat vacuum flanges (windows not included)
  • Easy to adjust tilt stages for beam alignment
  • The FS Ellipsometer source and detector units are compact and light (≈1 kg each). Contact us for more detailed mounting specifications and dimensions
  • Can be installed without breaking chamber vacuum

 

FS Ellipsometer ALD Applications

The FS Ellipsometer Multi-Wavelength Ellipsometer is ideal for Atomic Layer Deposition (ALD) applications

  • The excellent thickness precision can easily resolve the sub-monolayer thickness changes for individual ALD cycles
  • The compact design simplifies the mounting and integration with ALD reactors for in situ measurements
  • The in situ, real time thickness data provided by the FS Ellipsometer can significantly reduce the ALD process development time when exploring new process parameters and precursors
  • If in situ measurements are not possible (ports on the ALD chamber are required to provide access for the optical beam), the FS Ellipsometer can still provide accurate ex situ thickness measurements for very thin ALD films, at an affordable price
  • The FS Ellipsometer has been installed for in situ measurements on many different ALD reactors, including custom designs, and commercial reactors
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