Atomic Premium (Showerhead Type ALD/ CVD Process)
- Application:
- Dielectric films: Al2O3, HfO2, ZrO2, TiO2, ZnO, ZnS, GST, Laminate films
- Nitride films: AlN, TiN, TiAlN, TaN
- Metal films: Ru, Co, Ti, Ni
- Substrate Size: 4 ~ 12″ Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Gas Delivery System: Bubbler, LDS
- Max Temperature: 500℃ (@ Wafer)
- No. of Precursor Canisters: up to 4 sets (Standard)
Atomic Classic
- Application:
- Dielectric films: Al2O3, HfO2, ZrO2, TiO2, ZnO, STO, ZnS, Laminate films
- Thermal ALD
- Laminar Gas Flow (Side Gas flow)
- Gas Delivery System: Bubbler, LDS
- Low Particle Generation
- Small Volume for Process
- Available Laminated & Mixed process
- Easy User Interface & Maintenance
- Max Temperature: 450℃ (@ Wafer)
- No. of Precursor Canisters: up to 4 sets (Standard)
- Substrate Size: 4 ~ 8″ Standard (Wafer)
Atomic Shell
- Reactor Volume: 100cc ~ 500cc
- Filter Size: Variable(0.5um~ )
- Reactor Heating: Max 300℃ (Reactor Body: more than 230℃)
- Reactor Rotation: DC Motor Driver
- Rotation Speed: 10 ~ 60 rpm
Atomic Mega
- Application:
- Oxide films: Al2O3, HfO2, HfSiOx, HfAlOx, STO, Ta2O5, ZrO2
- Metal films: TiN, TiAlN, TaN, Ru, AlN, TaN
- Multi Process Chamber Cluster Tool
- Substrate Size: 4 ~ 12 ” Standard (Wafer)
- Cassette Type load-lock for Automated Process
- Vacuum Robot or Rodless Cylinder Operation
- 4-Sided Transfer Chamber
Process Performance
Film Uniformity
Al2O3
Uniformity: 0.6%
Source: TMA
Reactant: O3 (oxidant)
# of Cycles : 100
Film Uniformity (WIW / 49 points)
TaN
Average Sheet Resistance: 291 Ω/sg
Rs Uniformity: 1.62%
TaN Resistivity: 300 μΩ.cm
Thickness: ~ 100A
Film Uniformity (WTW / 49 points)
TaN
Average Mean Rs: 290 Ω/sq
Rs Uniformity: 1.59% ~ 1.71%
Step Coverage
TaN
Nearly 100% Step Coverage