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CN1, the leading supplier in Atomic Layer Deposition (ALD) offers high-quality pinhole free films that are perfectly uniform in thickness across the wafer topology, and even deep inside pores, trenches and cavities. The surfaces created by CN1 ALD are atomically smooth, well precise-controlled chemical composition.
CN1 system designs and process technologies have been thoroughly proven and perfected over a decade of intensive development and has been use widely in leading universities, academic institutions and advanced wafer fabs worldwide.

Atomic Premium (Showerhead Type ALD/ CVD Process)

  • Application:
    • Dielectric films: Al2O3, HfO2, ZrO2, TiO2, ZnO, ZnS, GST, Laminate films
    • Nitride films: AlN, TiN, TiAlN, TaN
    • Metal films: Ru, Co, Ti, Ni
  • Substrate Size: 4 ~ 12″ Standard (Wafer)
  • Thermal  ALD Process (Plasma Process Available)
  • Gas Delivery System: Bubbler, LDS
  • Max Temperature: 500℃ (@ Wafer)
  • No. of Precursor Canisters: up to 4 sets (Standard)
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Atomic Classic

  • Application:
    • Dielectric films: Al2O3, HfO2, ZrO2, TiO2, ZnO, STO, ZnS, Laminate films
  • Thermal ALD
  • Laminar Gas Flow (Side Gas flow)
  • Gas Delivery System: Bubbler, LDS
  • Low Particle Generation
  • Small Volume for Process
  • Available Laminated & Mixed process
  • Easy User Interface & Maintenance
  • Max Temperature: 450℃ (@ Wafer)
  • No. of Precursor Canisters: up to 4 sets (Standard)
  • Substrate Size: 4 ~ 8″ Standard (Wafer)

Atomic Shell

  • Reactor Volume: 100cc ~ 500cc
  • Filter Size: Variable(0.5um~ )
  • Reactor Heating: Max 300℃ (Reactor Body: more than 230℃)
  • Reactor Rotation: DC Motor Driver
  • Rotation Speed: 10 ~ 60 rpm
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Atomic Mega

  • Application:
    • Oxide films: Al2O3, HfO2, HfSiOx, HfAlOx, STO, Ta2O5, ZrO2
    • Metal films: TiN, TiAlN, TaN, Ru, AlN, TaN
  • Multi Process Chamber Cluster Tool
  • Substrate Size: 4 ~ 12 ” Standard (Wafer)
  • Cassette Type load-lock for Automated Process
  • Vacuum Robot or Rodless Cylinder Operation
  • 4-Sided Transfer Chamber

Process Performance

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Film Uniformity

Al2O3

Uniformity: 0.6%

Source: TMA

Reactant: O3 (oxidant)

# of Cycles : 100

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Film Uniformity (WIW / 49 points)

TaN

Average Sheet Resistance: 291 Ω/sg

Rs Uniformity: 1.62%

TaN Resistivity: 300 μΩ.cm

Thickness: ~ 100A

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Film Uniformity (WTW / 49 points)

TaN

Average Mean Rs: 290 Ω/sq

Rs Uniformity: 1.59% ~ 1.71%

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Step Coverage

TaN

Nearly 100% Step Coverage

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